At the mirrors of a laser diode self-mixing interferometer, the output beams carry anti-correlated (i.e., in phase oppos......

成功制备出2.6μm GaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(MBE)生长出器件的材料结构.为了得到......

为获得808 nm单巴条(bar)大功率半导体激光器寿命指标，研制了10工位大功率半导体激光器寿命实验在线监测系统，完成了3组寿命评价实验......